| 摘要 |
A EPROM(erasable programmable read only memory) and method thereof are provided to simplify in manufacturing and reduce the cell area using single poly gate. The structure of EPROM comprises: a semiconductor substrate(1) of a first conductive type; a gate electrode(12) formed on the semiconductor substrate(1); a gate insulating layer(11) formed between the semiconductor substrate(1) and the gate electrode(12) and having a ferroelectric layer(10) at the portion of the gate insulating layer(11); and a source and drain regions of a second conductive type formed in the semiconductor substrate(1).
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