MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method to suppress the phenomenon of crystallization in amorphous silicon from the surface of a layer insulating film located at a lower position when a hemispherical silicon particle is formed by a nucleation method on the amorphous silicon. SOLUTION: First, a gas such as SiH4 containing silicon is emitted on the upper and side surfaces of amorphous silicon so as to reduce a constant temperature for nucleation on the amorphous silicon to a temperature lower than that for forming a hemispherical silicon particle by annealing. This suppresses crystal growth from the layer insulating film into the amorphous silicon. The constant temperature in nucleation is set to a temperature lower than annealing by 5-20 deg.C or more preferably, by 5-10 deg.C.