| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser oscillating at a wavelength of 2.0μm. SOLUTION: An InP clad layer 1a is formed on an InP substrate 1, and InGaAs strained quantum well layers 4 constituted of seven layers grown on the layer 1a, an InGaAs barrier layer 4, and an InP clad layer 7 are formed. Composition wavelengthλg of the quantum well layers is 2.2μm, and the barrier layer is lattice-matching the InP clad layer and the InP substrate, and has composition wavelengthλg=1.67μm. Compressive strain whose strain amount is 1.3% is introduced in the quantum well layers, and strain is not introduced in the barrier layer. Photo luminescence light emitting wavelength from the quantum well crystalline body is 2.0μm.
|
