发明名称 Permanent metallic bonding method
摘要 A laser device is bonded to a diamond submount (20) by means of a procedure including (1) codepositing an auxiliary layer (22), on a layer of barrier metal (21) that has been deposited overlying the submount, followed by (2) depositing a wetting layer (23) on the auxiliary layer, and (3) by depositing a solder layer (24) comprising alternating metallic layers, preferably of gold and tin sufficient to form an overall tin-rich gold-tin eutectic composition. The barrier metal is typically W, Mo, Cr, or Ru. Prior to bonding, a conventional metallization such as Ti-Pt-Au (three layers) is deposited on the laser device's bottom ohmic contact, typically comprising Ge. Then, during bonding, the solder layer is brought into physical contact with the laser device's metallization under enough heat and pressure, followed by cooling, to form a permanent joint between them. The thickness of the solder layer is advantageously less than approximately 5 mu m. The wetting layer is preferably the intermetallic compound Ni3Sn4, and the auxiliary layer is formed by codepositing the metallic components of this intermetallic together with the barrier metal. <IMAGE>
申请公布号 SG43769(A1) 申请公布日期 1997.11.14
申请号 SG19960000722 申请日期 1993.08.20
申请人 AT & T CORP 发明人 KATZ AVISHAY;LEE CHIEN-HSUN;BACON DONALD DINGLEY;TAI KING LIEN;WONG YIU-MAN
分类号 H01L21/52;B23K20/02;B23K20/233;B23K35/00;H01L21/58;H01L21/60;H01L23/373;H01L33/40;H01L33/62;H01S5/00;H01S5/02;H01S5/022 主分类号 H01L21/52
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