| 摘要 |
<p>PROBLEM TO BE SOLVED: To lower an electron emitting electric field, and stabilize an emitting electric current, by forming a silicon nitride coat on at least the tip part of a conical projection, in an electron emitting element for emitting an electron from the tip part of the conical projection. SOLUTION: A silicon nitride coat 7; surface-reforming-treated in ammonium plasma to be nitrified, and having a thickness of about several-several tensÅ; is formed on a surface, including the tip part of the point part of a tip 4 (protruded on a silicon substrate 1 and formed into a fine conical state). Since the surface of a silicon tip 4 can be protected by forming a silicon nitride coat, on the surface including the point part of the tip 4, by this constitution; damages to the tip 4 due to sputtering, and also a semiconductor surface electric charge can be reduced. By this way extreme effect in the reduction of an electron emitting electric field, and in the stabilization, the long life, and the reliability improvement of an emitting electric current can be obtained.</p> |
