发明名称 |
Production of ceramic conductor substrate |
摘要 |
Production of a ceramic-conductor substrate (7) comprises (a) forming a laminating body (200), in which an Al2O3 layer (1) which was sintered not at 800-1000 deg C. is applied on the surface of a ceramic green plate (20) containing glass, which is sintered at 800-1000 deg C.(b) forming a ceramic sintered substrate (2), in which the ceramic green plate (20) is sintered and the Al2O3 layer (10) is formed by calcining the laminated body at 800-1000 deg C. to a porous Al2O3 layer (1), and the glass flows into the porous Al2O3 layer (1) so that a part of the porous Al2O3 layer (1), which is filled with the glass, with which the ceramic sintered substrate (2) is connected; (c) removing an Al2O3 part (109) of the porous Al2O3 layer (1) not connected to the surface of the ceramic sintered substrate (2), and imprinting a paste to form a conducting pattern (3) on the surface of the porous Al2O3 layer (1); and (d) adhering the pattern (3) to the substrate (2) using the porous Al2O3 layer (1) whilst the ceramic is calcined. Also claimed is the ceramic-conductor substrate. |
申请公布号 |
DE19712825(A1) |
申请公布日期 |
1997.10.30 |
申请号 |
DE1997112825 |
申请日期 |
1997.03.26 |
申请人 |
SUMITOMO METAL (SMI) ELECTRONICS DEVICES INC., MINE, YAMAGUCHI, JP |
发明人 |
ARAKI, HIDEAKI, MINE, YAMAGUCHI, JP;FUKAYA, MASASHI, MINE, YAMAGUCHI, JP |
分类号 |
C04B41/80;C04B35/111;H01L23/498;H01L23/538;H05K1/00;H05K1/03;H05K3/12;H05K3/38;H05K3/46;(IPC1-7):H05K3/12;C04B35/10 |
主分类号 |
C04B41/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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