THREE-COLOUR SENSOR WITH A PIN-LAYER SEQUENCE OR A NIP-LAYER SEQUENCE

摘要

A structure of several i-layers is limited on one side by a p-layer and on t he other side by an n-layer. The structure has means that form said i-layers in such a way that at least in the boundary area between two adjacent i-layers (i?I , i?II ), seen in the light incidence direction, the bandgap E g? (I) o f the first i-layer (i?I ) closer to the light input side is larger than the bandgap E g? (II) of the second i-layer (i?II ) adjacent to the first and further removed from the light input side. In addition, in the boundary area between two adjacent i-layers (i?I , i?II ), in the direction from the p-lay er to the n-layer, the product .mu.?(I) of the i-layer (i?I ) further removed from the n-layer is larger than the product .mu.?(II) of the i-layer (i?II ) closer to the n-layer. A structure is thus obtained for forming a colour sensor which generates signals which need to be superimposed to a lesser extent for image processing. The structure is preferably designed as a pin- or nip-structure.