发明名称 |
Diode and power converting apparatus |
摘要 |
In a diode according to the invention , the backward length L of an anode electrode in a region where a semiconductor layer of a p<+> conductivity type and an anode electrode do not contact each other is made longer than the diffusion length of holes in a semiconductor layer of an n<-> conductivity type for a large critical di/dt. <IMAGE> |
申请公布号 |
EP0794578(A1) |
申请公布日期 |
1997.09.10 |
申请号 |
EP19970301162 |
申请日期 |
1997.02.21 |
申请人 |
HITACHI, LTD. |
发明人 |
NAGASU, MASAHIRO;MORI, MUTSUHIRO;KOBAYASHI, HIDEO;SAKANO, JUNICHI |
分类号 |
H01L29/06;H01L29/417;H01L29/861;H02M7/48 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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