| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device where cracking is restrained from occurring in the side wall of an via opening and circuit devices formed on a substrate can be set uniform in performance, wherein the semiconductor substrate where circuit devices are formed is joined to an insulator support body by soldering for the formation of the semiconductor device. SOLUTION: A semiconductor device is equipped with a chip 7 soldered to a support 20. The chip 7 is possessed of a semiconductor substrate 10, a viahole 16, a grounding plane 12 formed on the back of the substrate 10, and an anti-sticking layer 13 deposited so as to be continuously joined to the inside of the viahole 10, wherein a solder layer 14 not wettable to the anti-sticking layer 13 but wettable to the grounding layer 12 is provided with a spherical body 14b which is located inside the viahole 10 so as not to come into mechanical contact, with it. The semiconductor device is manufactured through such a method that the solder layer 14 is interposed between the support 20 and the rear surface 10b where the grounding plane 12 and the anti-sticking layer 13 are formed and melted in a pressurized atmosphere, whereby the solder layer 14 is turned into a ball inside a viahole. The anti-sticking layer is formed without a mask. |
