| 发明名称 |
Method of forming insulating films, capacitances, and semiconductor devices |
| 摘要 |
Insulating metal oxide or nitride films are deposited by RF magnetron sputtering. During sputtering, the atmospheric gas comprises an oxygen or nitride compound gas and an inert gas. The proportion of the inert gas is decreased to 25 atom % or lower. By this sputtering condition, adverse effects caused by the inert gas is suppressed so that the quality of the insulating film is substantially improved.
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| 申请公布号 |
US5665210(A) |
申请公布日期 |
1997.09.09 |
| 申请号 |
US19940250344 |
申请日期 |
1994.05.27 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
| 分类号 |
C23C14/00;C23C14/06;C23C14/08;H01L21/28;H01L21/314;H01L21/316;H01L21/318;H01L29/51;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/00 |
| 代理机构 |
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