发明名称 Semiconductor device with insulating resin layer and substrate having low sheet resistance
摘要 A semiconductor device which realize reduction of thickness with maintaining shielding effect has a shielding package having a substrate with a plurality of electrode pattern provided on a surface thereof and side walls upwardly formed in the peripheral end part of the surface thereof, a semiconductor chip having a plurality of electrodes directly connected to the electrode patterns of the shielding package, respectively, an insulating resin layer of a low dielectric constant formed on the substrate enclosed by the side walls so as to cover, and a conductive resin layer formed on an entire surface of the insulating resin layer.
申请公布号 US5656857(A) 申请公布日期 1997.08.12
申请号 US19950439552 申请日期 1995.05.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KISHITA, YOSHIHIRO
分类号 H01L23/28;H01L21/56;H01L23/055;H01L23/24;H01L23/29;H01L23/31;H01L23/552;H01L23/58;H01L23/66;(IPC1-7):H01L23/29 主分类号 H01L23/28
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