| 摘要 |
A programmable semiconductor element having an antifuse structure and a method for fabricating the same is disclosed. The fabrication method for a programmable semiconductor element having an antifuse structure includes processes for forming a first insulation film on a silicon substrate, forming a conductive material having a fixed width on the first insulation film, forming a second insulation film on the conductive material, forming a recess by etching a part of the second insulation film, forming a conductive link at corners of the recess in the second insulation film, forming a contact hole by etching the second insulation film in the recess thereof having no conductive link formed thereon, exposing the conductive material at a lower part, forming two separated conductors by etching the exposed conductive material, and forming a capping insulation film on the overall surface of the substrate and covering the conductive link.
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