| 摘要 |
A technique related to a photo mask is described that forms a target for measuring a critical dimension and checking an overlap at a scribe line of a wafer. A cromium patterns 2' and 2" are formed on a silicon substrate 1 to have widthes of d1 and d2, respectively, the widthes d1 and d2 being different from each other. A first, second and third layer patterns 11, 12 and 13 for targets are sequentially formed on the wafer. The patterns 11, 12 and 13 have a line width which is determined considering that a vias generated at a photo etching process. Thereby, it is possible to form a target which has a correct section although several layers are stacked by repeating photo/etching processes.
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