| 摘要 |
In a light receiving element and a semiconductor device manufacturing method, the low density PN junction is formed by constructing the internal composition of the photodiode with N<+> type diffusion layer, N<-> type epitaxial layer, P<-> type epitaxial layer, P<+> type deposit layer, and P type Si from the light receiving surface, the vacant layer to be occurred when the photodiode is reverse biased will be widened and the light receiving sensitivity and the frequency characteristic will be improved. Furthermore, since the separation of bipolar elements will be conducted by P<-> epitaxial layer, the efficiency in density control at the time of P<-> type epitaxial growth can be improved. <IMAGE>
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