发明名称 CHARGING PUMP CIRCUIT FOR MOS TRANSISTOR DRIVING
摘要 PROBLEM TO BE SOLVED: To prevent the two MOS transistors of an output driving part from being turned on at the same time by suppressing dead time, to protect the MOS transistors of the output driving circuit and to integrate them in an IC circuit. SOLUTION: This circuit is composed of input driving parts 101a and 101b, charge pumping parts 102a and 102b and electrical discharge driving parts 103a and 103b. When one of the MOS transistors MOS1 and MOS2 of the output driving part 200 or one of MOS transistors MOS3 and MOS4 is driven, the electrical discharge driving parts 103a and 103b discharge the gate voltage of the residual MOS transistors.
申请公布号 JPH09153775(A) 申请公布日期 1997.06.10
申请号 JP19960109978 申请日期 1996.04.30
申请人 SAMSUNG ELECTRON CO LTD 发明人 KIN YOUKO;BIN HEIUN
分类号 G11C5/14;G11C11/407;H02M3/07;H03K17/06;H03K17/16;H03K17/687 主分类号 G11C5/14
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