SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, ITS OPERATING METHOD, AND ELECTRONIC CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the phenomenon of hot electron in a given memory cell when a charge accumulated in source and drain regions is reset after write and erase operation at a memory cell in a non-volatile memory. SOLUTION: A memory cell in a memory block MB is turned off just after write or erase operation is carried out in the given memory block of a flash memory. Then, potential of a main bit line BL is reduced to a grounding level, and switching MOSFET's Q1S and Q2s are turned on. As a result, a charge accumulated in a sub-source line SS and a sub-bit line BLS is each discharged to a grounding potential VSS or the main bit line BL.