Semiconductor device e.g. DRAM with fuse

摘要

An interlayer insulation layer (2) covers the fuse layer (1). In the insulating layer is located a concave section (2a) with an aperture width (W1), exceeding the two-dimensional width of the fuse layer. The concave section lies on the insulating layer surface directly above the fuse layer. On the insulation layer is deposited a passivating layer (4) with a first aperture (4R) directly above the fuse layer, exposing the bottom face of the concave section. The aperture has a second width (W2), smaller than the first one.