| 摘要 |
<p>A protecting device structure (100) for protecting one or more nodes of an integrated circuit to be protected against electostatic discharges (ESD) includes an MOS diode structure having source (11) and drain (12) regions and at least a pair of localized auxiliary region (13,14), each having a conductivity type that is opposite from that of the source and drain regions. The localized auxiliary regions are located contiguous with the source and drain regions, respectively, and in the channel between the source and drain regions. The protecting device structure is integrated in the integrated circuit and has a terminal (A,B) that is connected to a terminal of each of the one or more protected nodes of the integrated circuit. <IMAGE></p> |
