| 摘要 |
<p>Provided are a solid-state imaging element which can be simply manufactured and can control movement of electric charges in an accumulation region with a high degree of accuracy, and a method of manufacturing the same. A solid-state imaging element (1a) includes a substrate (11) having a first conductivity type; an accumulation region (12) having a second conductivity type and provided in the substrate (11); a read-out region (13) for receiving the transferred electric charges accumulated in the accumulation region (12); and a transfer section (14) for transferring the electric charges from the accumulation region (12) to the read-out region (13). An impurity concentration modulation region 121 having a locally high concentration of an impurity having the second conductivity type, or having a locally low concentration of an impurity having the first conductivity type is formed in a part of the accumulation region (12). An area of the impurity concentration modulation region (121) per unit distance with respect to the transfer section (14), or a density of the discretely provided impurity concentration modulation region (121) increases with decreasing distance to the transfer section (14).</p> |
