Verfahren zur Herstellung eines CMOS Halbleiterbauelements,申请号DE1990629430-传众专利搜索

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发明名称	Verfahren zur Herstellung eines CMOS Halbleiterbauelements
摘要
申请公布号	DE69029430(T2)	申请公布日期	1997.05.15
申请号	DE1990629430	申请日期	1990.06.08
申请人	KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP	发明人	SAITO, YASUYUKI, YOKOHAMA-SHI, KANAGAWA-KEN, JP
分类号	H01L21/336;H01L21/265;H01L21/3215;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L21/28;H01L21/82	主分类号	H01L21/336
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