| 摘要 |
PROBLEM TO BE SOLVED: To decrease the number of particles generated on a tungsten silicide thin film at the time of forming the film with a high electric power and to form a good-quality film by controlling the crystal face spacing of the Si and WSi2 intermetallic compd. constituting the target. SOLUTION: The spacing of the (220) face of Si in a target and the spacing of the (200) face of a WSi2 intermetallic compd. are made smaller by 0.1-1.5% than the theoretical value. The powders of W and Si classified to <=1.6μm grain diameter and having >=99.999% purity as the raw powder are mixed in 2.5-2.90 ratio of W/Si, the mixture is heated at 1,300 deg.C for 2hr in 5×10<-4> Torr vacuum to synthesize tungsten silicide, the silicide is crushed, and the obtained powder is kept in 5×10<-4> Torr vacuum at 1,340-1,380 deg.C and 500-800kg/cm<2> pressure for 2hr and hot-pressed to obtain the target.
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