| 摘要 |
<p>The invention provides a method which can suitably be used to mass-produce semiconductor devices. This method comprises the following steps: a) providing a silicon surface with an anti-reflective layer which is made predominantly from a mixture of polyimide and polyamidic acid; b) providing the anti-reflective layer with a photosensitive layer which is subjected to patterned radiation and then developed thus forming an etch mask of the photosensitive layer and the anti-reflective layer; c) etching the freed parts of the silicon surface; and d) removing the etch mask. The method in accordance with the invention is characterized in that, prior to applying the anti-reflective layer, the silicon surface is exposed to an oxidative treatment in which, preferably, an aqueous solution of hydrogen peroxide with ammonia or sulphuric acid is used. By virtue of this measure in accordance with the invention, the undesired etching away of small silicon structures is precluded. Said method in accordance with the invention can very advantageously be used to manufacture so-called 'buried oxide' structures and, in particular, to manufacture 'polylines'.</p> |
