SEMICONDUCTOR DIODE LASER

摘要

A semiconductor laser diode which includes an active layer (22) of an InGa1AsSb1-y alloy and a separate cladding layer (20, 24) on each side of the active layer. One of the cladding layers is of n-type conductivity (20) and the other cladding layer (24) is of p-type conductivity. At least the n-type cladding layer, and preferably both cladding layers, are of either an InAlPSb or an InGaPSb alloy.