发明名称 |
MATERIAL FOR FORMING SILICA-BASE COATED INSULATION FILM, PROCESS FOR PRODUCING THE MATERIAL, SILICA-BASE INSULATION FILM, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE DEVICE |
摘要 |
<p>A material for forming silica-base coated insulation films used to form interlayer insulation films of multi-layer interconnection in VLSIs is provided. A material for forming a silica-base coated insulation film, obtained from (a) an alkoxysilane and/or a partially hydrolyzed product thereof, (b) a fluorine-containing alkoxysilane and/or (e) an alkylalkoxysilane, (c) an alkoxide of a metal other than Si and/or a derivative thereof and (d) an organic solvent. The material for forming silica-base coated insulation films according to the present invention has a storage stability and also enables thick-layer formation. Silica-base insulation films obtained are transparent and uniform films and are those in which no defects such as cracks or pinholes are seen, also having a superior oxygen plasma resistance.</p> |
申请公布号 |
EP0768352(A1) |
申请公布日期 |
1997.04.16 |
申请号 |
EP19950923552 |
申请日期 |
1995.06.30 |
申请人 |
HITACHI CHEMICAL CO., LTD. |
发明人 |
MATSUZAWA, JUN |
分类号 |
C09D5/25;C09D183/14;H01L21/316;H01L21/768;(IPC1-7):C09D183/00;C09D185/00 |
主分类号 |
C09D5/25 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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