Semiconductor device with a contact metallization comprising aluminium and silicon and method of manufacturing this semiconductor device

摘要

The invention relates to a semiconductor device with a monocrystalline silicon body (1) provided with a dielectric layer (2) with contact holes (3) through which the silicon body (1) is contacted with an aluminium metallization. To avoid undesirable separation of silicon, a discontinuous nucleus layer (5) of a metal nobler than silicon is formed on the silicon body (1) in the contact holes (3) preceding the provision of the metallization (4).