Planarized multi-level interconnect scheme with embedded low-dielectric constant insulators

摘要

A multi-level interconnect structure and method. A first plurality of interconnect lines (14) is located on an insulator layer (12) of semiconductor body (10). A first layer of low dielectric constant material (20), such as an organic polymer, fills an area between the first plurality of interconnect lines (14a-c) . The first layer of low dielectric constant material (20) has a height not greater than a height of the first plurality of interconnect lines (14). A first layer of silicon dioxide (18) covers the first layer of low dielectric constant material (20) and the first plurality of interconnect lines (14).