| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a bismuth layer ferroelectric thin film ABi2 B2 O9 (where A is Cr or Ba and B is Nb or Ta) to be used in a nonvolatile memory, etc., by chemical vapor deposition. SOLUTION: The double ethoxide or double isopropoxide shown by A(B(OR)6 )2 as the raw material for A and B is vaporized or sublimated and introduced into a hot CVD device, bismuth tertiary-butoxide or bismuth tertiary- pentoxide is sublimated and introduced as the raw material for Bi, the raw gases are supplied on a heated substrate, the contact part between the raw gases and substrate is irradiated with UV to decompose and grow the raw gases, and then the product is heat-treated in an atmosphere contg. oxygen. The composition and crystal structure of the film are easily controlled by using the method, and the yield in the production of a semiconductor device is improved. |
