| 摘要 |
PROBLEM TO BE SOLVED: To carry out a free designing of an optical band gap of an amorphous thin film to attain a high quality of the thin film manufacture by a method wherein the amount of atomic state hydrogen fed to the surface of the semiconductor thin film is set within a specific range by the step exposing the thin film by a plasma made of hydrogen gas. SOLUTION: An RF discharging electrode to form hydrogen plasma is provided separately from a film forming mechanism. Next, a step to form a specific film-thickness by chemical vapor evaporating process and step to expose a formed amorphous semiconductor thin film to a plasma are repeated. At this time, the amount of the atomic state hydrogen is specified to at least 1×10<15> pieces/cm<2> to 5×10<15> pieces/cm<2> . Through these procedures, hydrogen can be effectively fed to any non-coupled bond in a film generation of which has been uncontrollable by normal film-forming method, as the result the defective density can be greatly decreased. |
