Lateral bipolar transistor structure including an integrated control circuit and integrated power transistor and associated manufacturing process

摘要

The present invention calls for the presence in a semiconductor material chip of a first buried region (3) having a first type of conductivity, second regions (6) of the same type of conductivity joining the first region with the surface of the chip, said first and second regions acting as regions insulating the control circuit, as well as the presence of a third region (4) of the opposite type of conductivity delimited by the aforesaid first and second regions. In order to minimize resistance between the base of the parasite transistor and the insulation terminal and thereby avoid the danger of firing of said transistor the structure of the transistor with lateral current flow has: a fourth region (8) having said first type of conductivity acting as the base region and provided within said third region (4), a fifth region (12) having the second type of conductivity provided in said fourth region (8) acting as the collector region, a sixth region (11) having the second type of conductivity provided in said fourth region (8) acting as the emitter region, a seventh region (10), with channel-stop function, having the first type of conductivity and more highly doped than said fourth region (8) and having annular geometry following the perimeter of said fourth region (8).