发明名称 |
AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications |
摘要 |
An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector made from InP, a P-type base made from InP, and an N-type emitter made from a semiconductor material of approximately 39 mole percent AlP and approximately 61 mole percent Sb.
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申请公布号 |
US5612551(A) |
申请公布日期 |
1997.03.18 |
申请号 |
US19960672210 |
申请日期 |
1996.06.27 |
申请人 |
HUGHES ELECTRONICS |
发明人 |
LIU, TAKYIU;NGUYEN, CHANH;MATLOUBIAN, MEHRAN |
分类号 |
H01L29/73;H01L21/203;H01L21/331;H01L29/201;H01L29/205;H01L29/737;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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