发明名称 SHAPE SIMULATION METHOD AND METHOD FOR DESIGNING MASK
摘要 PROBLEM TO BE SOLVED: To make it possible to exactly predict arbitrary working shapes by changing a working speed according to the ruggedness for the substrate surface direction of a surface to be worked. SOLUTION: The ruggedness of the shape of a resist 11 in the substrate surface direction of the resist 11 formed on the substrate is approximated by the spherical surface or colunm of a microsurface area S and the radius thereof is defined as (r). The dissolution rate of the dissolving parts of the resist 11 is inversely proportional to the surface area of the resist 11 where a unit developer amt. is in contact. Namely, the dissolution rate is proportional to the liquid volume of the developer 12 in contact per unit surface area of the resist 11. Then, dissolution rate attains R×f(r), where f(r) changes with the shape of the dissolving parts of the resist 11 and f(r)=1+α/r. R is the dissolution rate determined by an exposure condition, the photosensitive characteristic of the resist 11 and a process condition and α is an adjustment parameter.
申请公布号 JPH0943828(A) 申请公布日期 1997.02.14
申请号 JP19950190124 申请日期 1995.07.26
申请人 TOSHIBA CORP 发明人 SANHONGI SHOJI;INOUE SOICHI;ARAKI AKIKO
分类号 G01B21/20;C23F1/00;G03F1/36;G03F1/68;G03F7/20;H01L21/027 主分类号 G01B21/20
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