| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal surface plate used for lapping polishing and polishing a silicon wafer or the like being improved in the hardness and structure and the polishing speed as well as the product quality while being excellent in the stability of abrasive particles. SOLUTION: In a lapping surface plate to polish material through abrasive particles supplied a uniform structure is provided which is composed of carbon steel of C: 1.5wt.% or less as its chemical component. The carbon steel is formed of a single phase including no complex structure where such a crystallized substance as graphite is a second phase, and has a Vickers hardness Hv value of 200 or more and no coagulation particle formed therein by abrasive particles during polishing. The surface plate is composed of steel alloy including C: 0.95-0.60wt.% and Cr: 1-20wt.% and is used to perform lapping of a semiconductor substrate made of fragile material such as silicon. |
