| 摘要 |
<p>PURPOSE: To provide a forming method of a field emission electron source array by which a distance between emitter and gate electrodes can be shortened. CONSTITUTION: An insulating mask 14 is formed on a backing 10. Next, etching is performed by using the insulating mask, and a cone is formed on the backing. Next, an insulating layer 18 is formed on a surface of the backing containing the insulating mask 14. Next, metallic electrode layers 20 (20a and 20b) are formed on the insulating mask and the insulating layer by using a magnetron sputtering method.</p> |
