发明名称 FUSE ELEMENT CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a fuse element circuit which more surely prevents a fuse setting an option change signal from being cut wrong and improve a yield. SOLUTION: The circuit is provided at least with a dummy fuse part 400 which has a dummy fuse cut when a first and a second input signals are impressed under a predetermined input condition, and generates a dummy signal when the dummy fuse is cut, and a first fuse part 500 which has a fuse cut when the dummy signal is generated and a third input signal is impressed under a predetermined input condition and, generates a first option change signal when the fuse is cut. The circuit is further provided with a second fuse part 600 which has a fuse cut when the first option change signal of a plurality of option change signals is not generated and a forth input signal is impressed under a predetermined input condition, and generates a second option change signal when the fuse is cut.</p>
申请公布号 JPH097391(A) 申请公布日期 1997.01.10
申请号 JP19960128289 申请日期 1996.05.23
申请人 SAMSUNG ELECTRON CO LTD 发明人 KEN KOKUKAN;BOKU KITETSU
分类号 G11C11/413;G01R31/317;G11C7/10;G11C29/00;G11C29/04;G11C29/14;(IPC1-7):G11C29/00 主分类号 G11C11/413
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