Non-volatile semiconductor memory device programmable and erasable at low voltage

摘要

A non-volatile semiconductor memory device is implemented in a manner which allows programming and erasing at low voltage. The non-volatile semiconductor memory device includes a plurality of blocks, each including a plurality of wordlines acting as control gates, buried diffusion layers acting as sources and drains, metal lines arranged one for every two buried diffusion layers, and memory cells formed between the two buried diffusion layers. Block transistors are connected to both ends of the buried diffusion layers for connecting the buried diffusion layers to the corresponding metal lines. The buried diffusion layers of each block are connected through the block transistors in the form of a bellows.