Lateral field-effect-controlled semiconductor device on insulating substrate

摘要

PCT No. PCT/EP93/02216 Sec. 371 Date Feb. 21, 1995 Sec. 102(e) Date Feb. 21, 1995 PCT Filed Aug. 19, 1993 PCT Pub. No. WO94/06158 PCT Pub. Date Mar. 17, 1994A field-effect-controlled semiconductor device has a cathode, an anode, and a gate, and extends laterally on a first insulating layer covering a substrate. The device includes a main thyristor, a MOSFET switch and a diode which connects a highly doped region embedded in a first part of a second base region of the thyristor to the cathode of the device.