发明名称 |
Method of fabricating memory cells with buried bit lines |
摘要 |
A method of fabricating memory cells with buried bit lines. In this method, a pad oxide layer is formed on a first conductivity-type silicon substrate. A photoresist layer is formed on the pad oxide layer while exposing predetermined areas of channels. A thick oxide layer is deposited by liquid phase deposition (LPD). The photoresist layer is removed. Second conductivity-type impurities are implanted to form source-drain electrodes using the thick oxide layer as a mask. The thick oxide layer and the pad oxide layer are removed to form bit lines and then word lines are formed crossing the bit lines, whereby the structure with buried bit lines and an array of memory cells is completed.
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申请公布号 |
US5585296(A) |
申请公布日期 |
1996.12.17 |
申请号 |
US19960599923 |
申请日期 |
1996.02.12 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
CHUNG, CHENG-HUI;SHENG, YI-CHUNG;CHIA, BELLE |
分类号 |
H01L21/8246;H01L27/112;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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