| 摘要 |
A non-volatile semiconductor memory with an auto-function for automatically writing or erasing data includes a logic circuit, a select circuit and a test-mode control section. The test-mode control section responds to a plurality of signals transmitted from the outside of the memory for outputting a second verify signal indicating that a verify result is normal, a third verify signal indicating that the verify result is abnormal, and a select signal for selecting an external clock signal from the outside of the memory. The logic circuit forcibly sets to a predetermined value a first verify signal output from a verify circuit on the basis of the second and third verify signals output from the test-mode control section. The select circuit selects, in a normal mode, a clock signal output from an oscillator, and selects, in a test mode, the external clock signal. The number of repetitions of retrial is set irrespective of the verify signal output from the verify circuit.
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