发明名称 XOR CMOS logic gate
摘要 An exclusive OR circuit includes a first series circuit in which a source of a first pMIS transistor is connected to a positive-voltage power supply line. A drain of the first pMIS transistor is connected to a drain of a first nMIS transistor via a second nMIS transistor. The source of the first nMIS transistor is connected to a low-voltage power supply line via a fourth nMIS transistor. A second series circuit has a drain of a third nMIS transistor connected to a high-voltage power supply line via a second pMIS transistor. The source of the third nMIS transistor is connected to the source of a third pMIS transistor. The drain of the third pMIS transistor is connected to the low-voltage power supply line via a fourth pMIS transistor. The gates of the first and third nMIS transistors and the first and third pMIS transistors are connected to one another and provided with a first input. The gates of the second and fourth nMIS transistors and the second and fourth pMIS transistors are connected to one another and provided with a second input. The sources of the second and third nMIS transistors are connected to each other and provide the exclusive OR of the first and second inputs.
申请公布号 US5576637(A) 申请公布日期 1996.11.19
申请号 US19950441460 申请日期 1995.05.15
申请人 FUJITSU LIMITED 发明人 AKAOGI, TAKAO;KAWASHIMA, HIROMI;TAKEGUCHI, TETSUJI;HAGIWARA, RYOJI;KASA, YASUSHI;ITANO, KIYOSHI;OGAWA, YASUSHIGE;KAWAMURA, SHOUICHI
分类号 G05F3/20;G11C5/14;G11C16/04;G11C16/06;G11C16/08;G11C16/16;G11C16/30;G11C29/00;H03K3/356;H03K19/0185;H03K19/21;(IPC1-7):H03K19/21 主分类号 G05F3/20
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