发明名称 |
Positive-working naphtho quinone diazide sulfonic acid ester photoresist composition containing select combination of additives |
摘要 |
Disclosed is a positive-working photoresist composition used in the photolithographic patterning work for the manufacture of various electronic devices such as VLSIs having improved characteristics, in particular, in respect of the halation-preventing effect. In addition to the conventional ingredients of (a) an alkali-soluble novolac resin as a film-forming agent and (b) a naphthoquinonediazide group-containing compound as a photosensitizing agent, the composition is formulated by the admixture of a specific amount of (c) a halation-preventing agent which is a combination of, one, (c1) a 4,4'-bis(dialkylamino) benzophenone compound and, the other, (c2) a compound selected from the group consisting of polyhydroxy benzophenone compounds, amino- and hydroxy-containing benzophenone compounds and 4-pyrazolylazo compounds in a specific weight proportion of (c1):(c2).
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申请公布号 |
US5576138(A) |
申请公布日期 |
1996.11.19 |
申请号 |
US19950423722 |
申请日期 |
1995.04.18 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
ANDO, YOSHITO;SAWANO, ATSUSHI;TOKUTAKE, NOBUO;KOHARA, HIDEKATSU;NAKAYAMA, TOSHIMASA |
分类号 |
G03F7/004;G03F7/022;G03F7/09;H01L21/027;(IPC1-7):G03F7/023 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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