发明名称 |
Method for producing a semiconductor trench capacitor cell |
摘要 |
<p>A semiconductor trench capacitor structure having a first level aligned isolation structure and buried strap that extends from within the trench into the doped semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench within the trench capacitor and semiconductor substrate, depositing a layer of conductive material within the shallow trench, using a mask to define and recess the strap and depositing insulating material within the shallow trench. <IMAGE></p> |
申请公布号 |
EP0738006(A2) |
申请公布日期 |
1996.10.16 |
申请号 |
EP19960480036 |
申请日期 |
1996.03.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MCALPINE KENNEY, DONALD |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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