| 摘要 |
<p>PURPOSE: To provide a field effect type cold cathode where the quantity of electrons emitted from an emitter part is approximately fixed even after having passed the section of a gate electrode layer. CONSTITUTION: An ITO conductive layer 15 is made on a glass substrate 17, and hereon is an emitter layer 14 equipped with a pyramidal emitter section made. An SiO2 insulating layer 13 is made in the position excluding the tip part 18a of the emitter section on the emitter layer 14, and hereon is a gate electrode layer 19 made. The angle formed between the base 18b of the emitter part and the opening part 19b of the gate electrode layer is 30 deg.<=θ1<90 deg., and the height he of the emitter part and the height hg1 from the base 18b to the bottom of the opening 19b of the gate electrode layer have the relation of 0.4he <=hg1 <he .</p> |
