SEMICONDUCTOR MANUFACTURING METHOD OF TRI-STATE OUTPUT BUFFER

摘要

forming a field oxide(27) and a gate oxide(28) by forming a p-type well(26) on an n-type substrate(25); a first ion-implantation(29) to control the threshold voltage; a second ion-implantation(29') in the p-type well(26) by opening the region of the output terminal N-type transistor(11) and masking the rest region with P/R(33); and forming a polygate(30) and fabricating each transistor by forming an n-type/p-type source/drain(31,32).