| 摘要 |
<p>A DMOS device structure comprises a lightly doped semiconductor layer (1) of a first conductivity type, a plurality of lightly doped semiconductor regions (4,13,18) of a second conductivity type extending from a top surface of the lightly doped semiconductor layer (1) thereinto, source regions (6,16) of the first conductivity type contained in the lightly doped semiconductor regions (4,13,18) and defining channel regions. The lightly doped semiconductor regions (4,13,18) are contained in respective enhancement regions (12,14,19) of the lightly doped semiconductor layer of the same conductivity type as but with a lower resistivity than the lightly doped semiconductor layer (1). <IMAGE></p> |
