发明名称 Semiconductor device having CMOS circuit and bipolar circuit mixed
摘要 In a semiconductor device where a CMOS circuit and a bipolar circuit are mixed, the bipolar circuit is operated between a first power supply voltage and a second power supply voltage, and the CMOS circuit and a level conversion circuit between a CMOS level and a bipolar level are operated between the first power supply voltage and a third power supply voltage. The third power supply voltage is between the first and second power supply voltages.
申请公布号 US5561388(A) 申请公布日期 1996.10.01
申请号 US19940331968 申请日期 1994.10.31
申请人 NEC CORPORATION 发明人 KUMAGAI, KOUICHI
分类号 H03K19/01;H03K19/0175;H03K19/018;H03K19/0185;H03K19/08;(IPC1-7):H03K19/017 主分类号 H03K19/01
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