DRAM capacitor storage electrode with textured surface

摘要

A capacitor of a highly integrated semiconductor device and a manufacturing method therefor are provided. In the highly integrated semiconductor device, an HSG polysilicon layer pattern (46a) is formed having a multitude of hemispherical grains (50a) (HSG) on the top and side surfaces of the storage electrode. Electrode separation is performed by selectively removing a silicide layer (52) that has been formed of a sacrificial metal layer (38) after the HSG step. The HSG polysilicon layer pattern does not have to be etched so that HSG polysilicon layer pattern (50a) on the top and side surfaces of conductive layer pattern (46a) remains intact.