发明名称 |
Integrated circuit fabrication with interlevel dielectric |
摘要 |
An interlevel dielectric comprised of phosphorus-doped glass surrounding the second polysilicon level of an SRAM cell is disclosed. The second polysilicon is generally a cell local interconnect. The phosphorus-doped glass layer efficiently getters sodium from underlying layers. The phosphorus-doped glass layer is utilized although another doped gettering layer may be used at a higher level of the circuit.
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申请公布号 |
US5559052(A) |
申请公布日期 |
1996.09.24 |
申请号 |
US19940366192 |
申请日期 |
1994.12.29 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
LEE, KUO-HUA;YU, CHEN-HUA D. |
分类号 |
H01L21/322;H01L21/316;H01L21/66;H01L21/8244;H01L27/10;H01L27/11;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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