FINE WIRY SILICON AND ITS PRODUCTION

摘要

PURPOSE: To prevent contamination from a crucible and stably and efficiently obtain an ultrahigh-purity fine wiry silicon by using a method for melting a silicon rod according to high-frequency heating and drawing the molten silicon without using a crucible. CONSTITUTION: The tip of a vertically held silicon rod 1 is melted by high-frequency heating (4: a high-frequency coil) and a silicon crystal 5 to be a seed is fused to the molten silicon 3. The seed crystal 5 is then relatively separated from the silicon rod 1 in the vertical direction. Thereby, a fine wiry silicon having <=1mm thickness is obtained. The ratio of the silicon rod to the fine grown wiry silicon is preferably (1:1) to (100:1). The silicon rod or the fine wiry silicon or both are preferably rotated around a vertical shaft. The content of impurities contained in the silicon rod is preferably <=0.1%. Furthermore, the production operations are preferably carried out in an inert gas atmosphere.