| 摘要 |
PURPOSE: To provide an apparatus and a manufacturing method by which a high-quality film can be formed at high speed and at high yield in order to manufacture a low-cost and high-performance device using a thin film. CONSTITUTION: In a method of manufacturing a semiconductor film, energy for generation of a plasma is supplied intermittently, a group IV hydrogen compound or its derivative is changed into the plasma, and it is decomposed into an active species so as to be deposited on a substrate. The supply time of the energy is set to the time or lower of the reciprocal number of [(the constant of speed of the reaction of active species other than a long-lived active species inside the plasma and with a reacting mother gas) × (the number of mother-gas molecules)]. Then, it is considered that the secondary reaction of active species other than a main active species is suppressed, and the content ratio of an Si-H2 bond with reference to an Si-H bond can be made small. Consequently, a film which does not generate a power and which is of high quality can be formed at high speed and at high yield. |
