| 摘要 |
PURPOSE: To form a high-melting point metal thin film and/or a high-melting point metal silicide thin film, which are/is superior in film quality, by a method wherein the content of halogen in the metal thin film and/or the metal silicide thin film is set at a specified value or lower. CONSTITUTION: The content of halogen in a high-melting point metal thin film and/or a high-melting point metal silicide thin film is set at one wt.% or lower. That is, in a Ti thin film 5 and a TiSi2 thin film 6, the content of Cl is in the films is set at 0.2 to 0.7wt.%. In a semiconductor device having such a constitution, as the content of the Cl in the films 5 and 6 is little, an upper wiring layer 8 provided on these films 5 and 6 can be made to prevent from being erroded. Moreover, a barrier metal film can fulfill an effect for ensuring a low-resistance ohmic contact and the prevention of diffusion of an Al grain boundary int he interface between an Si substrate 1 and the layer 8. |
